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| SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4517, REV. - SHD114511 SHD114511A SHD114511B POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: * Switching Power Supply * Converters * Free-Wheeling Diodes * Polarity Protection Diode Features: * * * * * * * Ultra Low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Thermal Resistance Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR RthJC TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave (per leg) TJ = 25 C, IAS = 1.3 A, L = 40mH (per leg) IAS decay linearly to 0 in 1 s limited by TJ max VA=1.5VR Per Package Max. 30 60 860 27 1.3 0.35 -65 to +150 -65 to +150 Units V A A mJ A C/W C C Electrical Characteristics: Condition Max. Units 0.53 V @ 60A, Pulse, TJ = 25 C (per leg) measured at the leads 0.43 V VF2 @ 60A, Pulse, TJ = 125 C (per leg) measured at the leads Max. Reverse Current IR1 @VR = 30V, Pulse, 6 mA TJ = 25 C (per leg) IR2 @VR = 30V, Pulse, 300 mA TJ = 125 C (per leg) 3300 pF Max. Junction Capacitance CT @VR = 5 V, TC = 25 C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) Due to the nature of the 30V Schottky devices, some degradation in trr performance at high temperatures should be expected, unlike conventional lower voltage Schottkys. Characteristics Max. Forward Voltage Drop Symbol VF1 * 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * SENSITRON TECHNICAL DATA DATA SHEET 4517, REV. - Mechanical Dimensions: in inches / mm .560? 020 (14.2? 508) .410? 010 (10.4? 254) SHD114511 SHD114511A SHD114511B .410.010 (10.4.254) .550?020 (14.0?508) .410?010 (10.4?254) .150? 010 (3.81? 254) .410.010 (10.4.254) .410?010 (10.4?254) .200?010 (5.08 ?254) .410? 010 (10.4? 254) .015? 005 (.381? 127) .075 (1.91) Max Alumina Ring Moly Lid .020?005 R (.508?127 ) Copper Anode .090 (2.29) Max .020? 005 R (.508? 127 ) .075 (1.91) Alumina Moly Moly Base (Cathode) Moly Anode .020?002 (.508?051) .060?010 (1.52?254) Alumina Ring Moly Base (Cathode) .015? 002 (.381? 051) .060? 010 (1.52? 254) Moly SHD-3 SHD-3A Typical Forward Characteristics SHD-3B Typical Reverse Characteristics 103 102 150 C Instantaneous Reverse Current - IR (mA) 102 125 C 100 C 150 C 101 Instantaneous Forward Current - IF (A) 75 C 100 101 50 C 10-1 25 C 125 C 10-2 0 10 20 30 Reverse Voltage - VR (V) 40 100 25 C Junction Capacitance - CT (pF) 3000 2700 2400 2100 1800 0 Typical Junction Capacitance 25 C 10-1 0.0 0.1 0.2 0.3 0.4 0.5 Forward Voltage Drop - VF (V) 0.6 10 20 30 Reverse Voltage - VR (V) 40 Vf Curves shown are for die only. * 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. * 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * |
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